A high-performance, ruggedized RF power amplifier module designed for demanding communications, radar, and EW applications. Delivers exceptional linearity and efficiency across a wide frequency range.
VPAM-1000-2000-200 is a high power amplifier that operates between 1000 MHz and 2000 MHz and generates 200 watts of saturated output power. The module utilizes GaN (Gallium Nitride) and chip-and-wire technology in the manufacturing process that ensures stateof-the-art power performance with excellent power-to-volume ratio that’s ideal for broadband high power linear applications. This Class AB amplifier is designed for a 50 ohm input/output impedance and offers high efficiency and high linearity, operating over a wide dynamic range with impressive typical performance that includes 53 dB gain, ±1.5 dB gain flatness, -20 dBc harmonic suppression, -60 dBc Spurious, and a maximum input power level of +10 dBm. Typical DC bias requirements include +28V and 20A of current. The module uses an SMA female input and output connector. The DC interface incorporates a D-Sub 7 pin male connector for DC bias, Shutdown with TTL logic control, Current Sense, and Temperature Sense functions. A mating female D-SUB socket connector is included. The rugged amplifier design operates over wide temperature range from -20°C and +60°C and can withstand relative humidity exposure up to 95% maximum.